Pb Free Plating Product
ISSUED DATE :2006/12/06
REVISED DATE :
GTM
CORPORATION
BVDSS
DS(ON)
-30V
32mꢀ
-18A
GJ405
R
I
D
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GJ405 uses advanced trench technology to provide excellent on-resistance, low gate charge and low gate
resistance.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited
for high current load applications.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
Package Dimensions
TO-252
Millimeter
Millimeter
Min.
0.50
2.20
0.45
0
0.90
5.40
0.80
REF.
REF.
Min.
Max.
6.80
5.50
7.20
3.00
Max.
0.70
2.40
0.55
0.15
1.50
5.80
1.20
A
B
C
D
E
F
6.40
5.20
6.80
2.40
G
H
J
K
L
2.30 REF.
0.70
0.60
0.90
0.90
M
R
S
Absolute Maximum Ratings
Parameter
Symbol
VDS
Ratings
-30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @T
ID @T
IDM
PD @T =25к
C
=25к
-18
A
C
=100к
-14
A
-40
A
Total Power Dissipation
C
60
W
Linear Derating Factor
0.4
W/к
mJ
A
Single Pulse Avalanche Energy2
Single Pulse Avalanche Current
Operating Junction and Storage Temperature Range
EAS
IAS
61
-35
Tj, Tstg
-55 ~ +175
к
Thermal Data
Parameter
Symbol
Rthj-c
Value
2.5
Unit
к/W
к/W
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Rthj-a
50
GJ405
Page: 1/4