Datasheet > GJ3669

GJ3669

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	158K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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GJ3669 数据手册

ISSUED DATE :2005/08/31

REVISED DATE :2005/11/28B

GTM

CORPORATION

GJ3669

N P N E P I T A X I A L P L A N A R T R A N S I S T O R

Description

The GJ3669 is designed for using in power amplifier applications, power switching applications.

Package Dimensions

TO-252

Millimeter

REF.

Min.

6.40

5.20

6.80

2.40

Max.

6.80

5.50

7.20

3.00

Min.

Max.

0.70

2.40

0.55

0.15

1.50

5.80

1.20

0.50

2.20

0.45

2.30 REF.

0.90

5.40

0.80

0.70

0.60

0.90

Absolute Maximum Ratings (T

Parameter

=25к)

Symbol

Ratings

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

CBO

VCEO

EBO

Total Device Dissipation (T

Junction Temperature

Storage Temperature

A=25к)

1.25

150

Tstg

-55 ~ +150

Electrical Characteristics (T

A = 25к unless otherwise noted)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

=100uA, I

=10mA, I

=100uA, I

CB=80V, I

EB=5V, I =0

BVCEO

BVEBO

CBO

EBO

0.5

1.2

240

*VCE(sat)

*VBE(sat)

0.15

0.9

=1A, I

=50mA

*hFE

CE=2V, I

=0.5A

=1.5A

100

MHz

=500mA, f=100MHz

=0, f=1MHz

=30ꢀ,

Cob

CB=10V, IE

CC=30V, R

ton (Turn-On Time)

tstg (Storage Time)

tf (Fall Time)

0.2

1.0

0.2

=1A,

B1=-IB2=50mA,

Duty CycleЉ1%

*Pulse Test: Pulse WidthЉ380ꢀs, Duty CycleЉ2%

Classification Of hFE

Rank

Range

70 ~ 140

120 ~ 240

GJ3669

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