Pb Free Plating Product
ISSUED DATE :2005/02/25
REVISED DATE :
GTM
CORPORATION
BVDSS
DS(ON)
-30V
200mꢀ
-10A
GJ3403
R
I
D
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GJ3403 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The TO-252 package is universally used for commercial-industrial applications.
Features
*Simple Drive Requirement
*Lower Gate Charge
*Fast Switching
Package Dimensions
TO-252
Millimeter
Millimeter
Min.
0.50
2.20
0.45
0
0.90
5.40
0.80
REF.
REF.
Min.
Max.
6.80
5.50
7.20
3.00
Max.
0.70
2.40
0.55
0.15
1.50
5.80
1.20
A
B
C
D
E
F
6.40
5.20
6.80
2.40
G
H
J
K
L
2.30 REF.
0.70
0.60
0.90
0.90
M
R
S
Absolute Maximum Ratings
Parameter
Symbol
VDS
Ratings
-30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
ID @T
ID @T
C
C
=25к
=70к
-10
A
-8.6
A
IDM
-48
A
Total Power Dissipation
PD @T
C=25к
36.7
W
Linear Derating Factor
0.29
W/к
к
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Thermal Data
Parameter
Symbol
Rthj-case
Rthj-amb
Value
3.4
Unit
к/W
к/W
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
110
GJ3403
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