Pb Free Plating Product
ISSUED DATE :2005/12/05
REVISED DATE :
GTM
CORPORATION
BVDSS
DS(ON)
-20V
52mꢀ
-18A
GJ20P02
R
I
D
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GJ20P02 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*2.5V Gate Drive Capability
*Fast Switching Characteristic
Package Dimensions
TO-252
Millimeter
Millimeter
Min.
0.50
2.20
0.45
0
0.90
5.40
0.80
REF.
REF.
Min.
Max.
6.80
5.50
7.20
3.00
Max.
0.70
2.40
0.55
0.15
1.50
5.80
1.20
A
B
C
D
E
F
6.40
5.20
6.80
2.40
G
H
J
K
L
2.30 REF.
0.70
0.60
0.90
0.90
M
R
S
Absolute Maximum Ratings
Parameter
Symbol
VDS
Ratings
-20
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @T
ID @T
IDM
PD @T =25к
C
=25к
-18
A
C
=100к
-14
A
-50
A
Total Power Dissipation
C
31.25
0.25
W
Linear Derating Factor
W/к
к
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Thermal Data
Parameter
Symbol
Rthj-c
Value
4.0
Unit
к/W
к/W
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Rthj-a
110
GJ20P02
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