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GJ1182 PDF预览

GJ1182

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
GTM 晶体晶体管局域网
页数 文件大小 规格书
2页 279K
描述
NP SILICON EPITAXIAL PLANAR TRANSISTOR

GJ1182 数据手册

 浏览型号GJ1182的Datasheet PDF文件第2页 
ISSUED DATE :2005/10/06  
REVISED DATE :  
GTM  
CORPORATION  
GJ1182  
P N P S I L I C O N E P I T AX I A L P L A N A R T R A N S I S T O R  
Description  
The GJ1182 is designed for medium power amplifier applications.  
Features  
ԦLow collector saturation voltage : VCE(sat)=-0.5V(Typ.)  
Package Dimensions  
TO-252  
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
Max.  
6.80  
5.50  
7.20  
3.00  
Min.  
Max.  
0.70  
2.40  
0.55  
0.15  
1.50  
5.80  
1.20  
A
B
C
D
E
F
6.40  
5.20  
6.80  
2.40  
G
H
J
K
L
0.50  
2.20  
0.45  
0
2.30 REF.  
0.90  
5.40  
0.80  
0.70  
0.60  
0.90  
0.90  
M
R
S
Absolute Maximum Ratings at Ta = 25к  
Parameter  
Symbol  
Tj  
Ratings  
+150  
-55~+150  
Unit  
Junction Temperature  
к
к
V
V
V
Storage Temperature  
Tstg  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
V
CBO  
-40  
-32  
-5  
-2  
-3  
VCEO  
V
EBO  
I
I
C
C
A
A
Collector Current (Pulse, Pw=100ms)  
Total Power Dissipation(T  
C
=25к)  
PD  
10  
W
Electrical Characteristics (Ta = 25к, unless otherwise noted)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
V
Test Conditions  
BVCBO  
BVCEO  
BVEBO  
-40  
-32  
-5  
-
-
-
-
-
-
-
-
-
-
-
I
I
I
V
V
C
=-50uA , I  
E
=0  
=0  
=0  
=0  
=0  
=-200mA  
V
V
uA  
uA  
mV  
C
=-1mA, I  
B
E
=-50uA ,IC  
CB=-20V, I  
I
I
CBO  
-1  
-1  
-800  
390  
-
E
EBO  
EB=-4V, I  
C
*VCE(sat)  
*hFE  
fT  
-500  
-
100  
I
C
=-2A, I  
CE=-3V, I  
B
82  
-
V
V
V
C
=-500mA  
=-500mA, f=100MHz  
CB=-10V, IE=0, f=1MHz  
MHz  
pF  
CE=-5V, I  
C
Cob  
-
50  
-
* Pulse Test: Pulse WidthЉ380s, Duty CycleЉ2%  
Classification Of hFE  
Rank  
P
Q
R
Range  
82 ~ 180  
120 ~ 270  
180 ~ 390  
GJ1182  
Page: 1/2  

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