Pb Free Plating Product
ISSUED DATE :2005/01/05
REVISED DATE :
GTM
CORPORATION
BVDSS
DS(ON)
600V
4.0ꢀ
3.3A
GJ03N70
R
I
D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GJ03N70 is specially designed as main switching devices for universal 90~265VAC off-line AC/DC
converter applications.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and
suited for AC/DC converters.
Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching Speed
Package Dimensions
TO-252
Millimeter
Millimeter
Min.
0.50
2.20
0.45
0
0.90
5.40
0.80
REF.
REF.
Min.
Max.
6.80
5.50
7.20
3.00
Max.
0.70
2.40
0.55
0.15
1.50
5.80
1.20
A
B
C
D
E
F
6.40
5.20
6.80
2.40
G
H
J
K
L
2.30 REF.
0.70
0.60
0.90
0.90
M
R
S
Absolute Maximum Ratings
Parameter
Symbol
VDS
Ratings
600
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGS
±30
V
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @T
ID @T
IDM
PD @T =25к
C
=25к
3.3
A
C
=100к
2.1
A
13.2
45
A
Total Power Dissipation
C
W
Linear Derating Factor
Single Pulse Avalanche Energy2
0.36
85
W/к
mJ
A
EAS
IAR
Avalanche Current
3.3
Repetitive Avalanche Energy
Operating Junction and Storage Temperature Range
EAR
3.3
mJ
к
Tj, Tstg
-55 ~ +150
Thermal Data
Parameter
Symbol
Rthj-c
Value
2.8
Unit
к/W
к/W
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Rthj-a
110
GJ03N70
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