Datasheet > GJ01L60

GJ01L60

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	257K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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GJ01L60 数据手册

Pb Free Plating Product

ISSUED DATE :2005/08/19

REVISED DATE :

GTM

CORPORATION

BVDSS

DS(ON)

600V

12ꢀ

GJ01L60

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GJ01L60 (TO-252) is universally preferred for all commercial-industrial surface mount applications and

suited for AC/DC converters.

Features

*Repetitive Avalanche Rated

*Simple Drive Requirement

*Fast Switching Speed

*RoHS Compliant

Package Dimensions

TO-252

Millimeter

Min.

0.50

2.20

0.45

0.90

5.40

0.80

REF.

Min.

Max.

6.80

5.50

7.20

3.00

Max.

0.70

2.40

0.55

0.15

1.50

5.80

1.20

6.40

5.20

6.80

2.40

2.30 REF.

0.70

0.60

0.90

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

600

Gate-Source Voltage

V_GS

±30

Continuous Drain Current, V_GS@10V

Pulsed Drain Current¹

I_D@T

I_DM

P_D@T =25к

=25к

=100к

0.8

Total Power Dissipation

Linear Derating Factor

Single Pulse Avalanche Energy²

0.232

0.5

W/к

E_AS

I_AR

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and Storage Temperature Range

E_AR

0.5

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-case

Rthj-amb

Value

4.3

Unit

к/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

110

GJ01L60

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