Datasheet > GISD1804

GISD1804

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
3页	239K
描述
NPN EPITAXIAL PLANAR SILICON TRANSISTOR

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数据手册

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GISD1804 数据手册

ISSUED DATE :2005/01/13

REVISED DATE :

GTM

CORPORATION

GISD1804

N P N E P I T AX I A L P L A N A R S I L I C O N T R A N S I S T O R

Description

The GISD1804 applies to relay drivers, high-speed inverters, converters, and other general high-current switching applications.

Features

Low collector-to-emitter saturation voltage

High current and high f

Excellent linearity of hFE

Fast switching time

Package Dimensions

TO-251

Millimeter

REF.

Min.

Max.

6.80

5.50

7.20

7.80

Min.

Max.

0.70

2.40

0.55

0.60

1.50

5.80

6.40

5.20

6.80

7.20

0.50

2.20

0.45

0.90

5.40

2.30 REF.

0.60

0.90

Absolute Maximum Ratings (Ta = 25к, unless otherwise specified)

Parameter

Junction Temperature

Storage Temperature

Symbol

Ratings

Unit

+150

Tstg

-55 ~ +150

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current(DC)

Collector Current(Pulse)

VCBO

VCEO

VEBO

Tc=25к

Collector Dissipation

Electrical Characteristics (Ta = 25к unless otherwise specified)

Symbol

(BR)CBO

Min.

Typ.

Max.

Unit

Test Conditions

IC=10uA, IE=0

IC=1mA, RBE=Ќ

(BR)CEO

(BR)EBO

IE=10uA, IC=0

VCB=40V, IE=0

VEB=4V, IC=0

IC=4A, IB=0.2A

VCE=2V, IC=0.5A

VCE=2V, IC=6A

VCE=5V,IC=1A

See test circuit

VCB=10V, f=1MHz

ICBO

IEBO

VCE(sat)

VBE(sat)

0.2

0.95

0.4

1.3

hFE

400

hFE

180

500

MHZ

tstg

Cob

ISD1804

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