Pb Free Plating Product
ISSUED DATE :2005/07/21
REVISED DATE :
GTM
CORPORATION
BVDSS
DS(ON)
60V
36mꢀ
25A
GI9971
R
I
D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GI9971 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The through-hole version (TO-251) is available for low-profile applications and suited for low voltage applications
such as DC/DC converters.
Features
*Low On-resistance
*Simple Drive Requirement
Package Dimensions
TO-251
Millimeter
Millimeter
REF.
REF.
Min.
Max.
6.80
5.50
7.20
7.80
Min.
Max.
0.70
2.40
0.55
0.60
1.50
5.80
A
B
C
D
E
F
6.40
5.20
6.80
7.20
G
H
J
K
L
0.50
2.20
0.45
0.45
0.90
5.40
2.30 REF.
0.60
0.90
M
Absolute Maximum Ratings
Parameter
Symbol
VDS
Ratings
Unit
Drain-Source Voltage
60
±20
V
V
Gate-Source Voltage
VGS
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @T
ID @T
IDM
PD @T =25к
C
=25к
25
A
C
=100к
16
A
80
A
Total Power Dissipation
C
39
W
W/к
к
Linear Derating Factor
0.31
-55 ~ +150
Operating Junction and Storage Temperature Range
Tj, Tstg
Thermal Data
Parameter
Symbol
Rthj-c
Value
3.2
Unit
к/W
к/W
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Rthj-a
110
G
I9971
Page: 1/4