Datasheet > GI9962

GI9962

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	244K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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GI9962 数据手册

Pb Free Plating Product

ISSUED DATE :2005/11/16

REVISED DATE :

GTM

CORPORATION

BVDSS

DS(ON)

40V

20mꢀ

32A

GI9962

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GI9962 provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The through-hole version (TO-251) is available for low-profile applications and suited for low voltage

applications such as DC/DC converters.

Features

*Low On-resistance

*Single Drive Requirement

Package Dimensions

TO-251

Millimeter

REF.

Min.

Max.

6.80

5.50

7.20

7.80

Min.

0.50

2.20

0.45

0.90

5.40

Max.

0.70

2.40

0.55

0.60

1.50

5.80

6.40

5.20

6.80

7.20

2.30 REF.

0.60

0.90

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

Continuous Drain Current, V_GS@10V

Pulsed Drain Current¹

I_D@T

I_DM

P_D@T =25к

=25к

=100к

150

Total Power Dissipation

34.7

W/к

Linear Derating Factor

0.27

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-c

Value

4.5

Unit

к/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Rthj-a

110

I9962

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