Datasheet > GI965

GI965

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	157K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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数据手册

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GI965 数据手册

ISSUED DATE :2005/05/12

REVISED DATE :

GTM

CORPORATION

GI965

N P N E P I T AX I A L P L A N A R T R A N S I S T O R

Description

The GI965 is designed for use as AF output amplifier and flash unit.

Package Dimensions

TO-251

Millimeter

REF.

Millimeter

REF.

Min.

6.40

5.20

6.80

7.20

Max.

6.80

5.50

7.20

7.80

Min.

0.50

2.20

0.45

0.90

5.40

Max.

0.70

2.40

0.55

0.60

1.50

5.80

2.30 REF.

0.60

0.90

Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (Continuous)

Collector Current (Peak PT=10mS)

Junction Temperature

Symbol

Ratings

Unit

CBO

VCEO

EBO

+150

-55 ~ +150

Storage Temperature

TsTG

Total Power Dissipation

Electrical Characteristics (Rating at Ta=25к)

Symbol

BVCBO

Min.

Typ.

Max.

Unit

Test Conditions

=100uA

=1mA

BVCEO

BVEBO

230

150

=10uA

CB=60V

EB=7V

CBO

EBO

100

1000

800

*VCE(sat)

*hFE1

*hFE2

350

150

lC=3A, IB=100mA

CE=2V, I

CE=6V, I

=500mA

=2A

=50mA

MHz

Cob

CB=20V, f=1MHz

* Pulse Test: Pulse WidthЉ380ꢀs, Duty CycleЉ2%

Classification Of hFE

Rank

Range

230 ~ 380

340 ~ 600

560 ~ 800

I965

Page: 1/2

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