Pb Free Plating Product
ISSUED DATE :2005/02/23
REVISED DATE :
GTM
CORPORATION
BVDSS
DS(ON)
-30V
50mꢀ
-20A
GI9435
R
I
D
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GI9435 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The TO-251 package is universally used for commercial-industrial applications.
Features
*Simple Drive Requirement
*Lower Gate Charge
*Fast Switching
Package Dimensions
TO-251
Millimeter
REF.
Millimeter
REF.
Min.
6.40
5.20
6.80
7.20
Max.
Min.
Max.
0.70
2.40
0.55
0.60
1.50
5.80
A
B
C
D
E
F
6.80
5.50
7.20
7.80
G
H
J
K
L
0.50
2.20
0.45
0.45
0.90
5.40
2.30 REF.
0.60
0.90
M
Absolute Maximum Ratings
Parameter
Symbol
VDS
Ratings
-30
Unit
Drain-Source Voltage
V
V
Gate-Source Voltage
VGS
±20
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
ID @T
ID @T
IDM
PD @T =25к
C
=25к
-20
A
C
=100к
-13
A
-72
A
Total Power Dissipation
C
31
W
W/к
к
Linear Derating Factor
0.25
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Thermal Data
Parameter
Symbol
Rthj-case
Rthj-amb
Value
4.0
Unit
к/W
к/W
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
110
G
I9435
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