Datasheet > GI8550

GI8550

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管
页数	文件大小	规格书
2页	180K
描述
PNP EPITAXIAL TRANSISTOR

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GI8550 数据手册

ISSUED DATE :2005/05/06

REVISED DATE :

GTM

CORPORATION

GI8550

P N P E P I T A X I A L T R A N S I S T O R

Description

The GI8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.

Features

*High Collector current (IC: 1.5A)

*Complementary to GI8050

Package Dimensions

TO-251

Millimeter

REF.

Min.

Max.

6.80

5.50

7.20

7.80

Min.

Max.

0.70

2.40

0.55

0.60

1.50

5.80

6.40

5.20

6.80

7.20

0.50

2.20

0.45

0.90

5.40

2.30 REF.

0.60

0.90

Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collect Current

Symbol

Ratings

-40

Unit

CBO

VCEO

-25

EBO

-6

-1.5

Base Current

-0.5

Junction Temperature

Storage Temperature Range

Total Power Dissipation

TsTG

+150

-55 ~ +150

1.25

Electrical Characteristics(Ta = 25к,unless otherwise specified)

Symbol

Min.

-40

-25

-6

Typ.

Max.

Unit

Test Conditions

BVCBO

BVCEO

BVEBO

=-100uA

=-2mA

=-100uA

CB=-35V

BE=-6V

CBO

-100

-0.5

-1.2

-1

EBO

*VCE(sat)

*VBE(sat)

*VBE(on)

=-800mA, I

=-80mA

=-10mA

=-5mA

=-100mA

=-800mA

C=-800mA, I

CE=-1V, I

*hFE

120

100

500

MHz

CE=-10V, I =-50mA, f=100MHz

CB=-10V, IE=0, f=1MHz

Cob

* Pulse Test: Pulse WidthЉ380ꢀs, Duty CycleЉ2%

Classification Of hFE

Rank

Range

120 ~ 200

160 ~ 300

250 ~ 500

I8550

Page: 1/2

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