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GI8050 PDF预览

GI8050

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
GTM 晶体晶体管
页数 文件大小 规格书
2页 161K
描述
NPN EPITAXIAL TRANSISTOR

GI8050 数据手册

 浏览型号GI8050的Datasheet PDF文件第2页 
ISSUED DATE :2005/05/06  
REVISED DATE :  
GTM  
CORPORATION  
GI8050  
N P N E P I T A X I A L T R A N S I S T O R  
Description  
The G  
I8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.  
Features  
*High Collector current (IC: 1.5A)  
*Complementary to GI8550  
Package Dimensions  
TO-251  
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
Max.  
6.80  
5.50  
7.20  
7.80  
Min.  
Max.  
0.70  
2.40  
0.55  
0.60  
1.50  
5.80  
A
B
C
D
E
F
6.40  
5.20  
6.80  
7.20  
G
H
J
K
L
0.50  
2.20  
0.45  
0.45  
0.90  
5.40  
2.30 REF.  
0.60  
0.90  
M
Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
Ratings  
Unit  
V
CBO  
40  
25  
V
V
VCEO  
V
EBO  
6
V
I
C
B
1.5  
A
Base Current  
I
0.5  
A
Junction Temperature  
Storage Temperature  
Total Power Dissipation  
Tj  
+150  
-55 ~ +150  
1.25  
к
к
W
TsTG  
PD  
Electrical Characteristics (Rating at 25к ambient temperature unless otherwise specified)  
Symbol  
BVCBO  
BVCEO  
BVEBO  
Min.  
40  
25  
6
-
-
-
-
-
45  
120  
40  
100  
-
Typ.  
Max.  
Unit  
V
V
Test Conditions  
-
-
-
-
-
-
-
-
-
-
-
-
9
-
-
-
I
I
I
V
V
C
C
=100uA  
=2mA  
V
E
=100uA  
CB=35V  
BE=6V  
I
I
CBO  
100  
100  
0.5  
1.2  
1.0  
-
500  
-
-
nA  
nA  
V
V
V
EBO  
*VCE(sat)  
*VBE(sat)  
*VBE(on)  
l
l
C
=800mA, I  
B
=80mA  
=80mA  
C=800mA, I  
B
V
V
V
V
V
V
CE=1V, I  
CE=1V, I  
CE=1V, I  
CE=1V, I  
C
C
C
C
=10mA  
=5mA  
*hFE  
*hFE  
*hFE  
fT  
1
2
3
=100mA  
=800mA  
CE=10V, I =50mA, f=100MHz  
MHz  
pF  
C
Cob  
-
CB=10V, IE=0, f=1MHz  
* Pulse Test: Pulse WidthЉ380s, Duty CycleЉ2%  
Classification Of hFE  
2
Rank  
C
D
E
Range  
120 ~ 200  
160 ~ 300  
250 ~ 500  
G
I8050  
Page: 1/2  

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