Datasheet > GI6679

GI6679

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	231K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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GI6679 数据手册

Pb Free Plating Product

ISSUED DATE :2005/08/04

REVISED DATE :

GTM

CORPORATION

BVDSS

DS(ON)

-30V

9mꢀ

-75A

GI6679

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GI6679 provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The TO-251 package is available for low-profile applications and suited for low voltage applications such as

DC/DC converters.

Features

*Simple Drive Requirement

*Lower On-resistance

*Fast Switching Characteristic

Package Dimensions

TO-251

Millimeter

REF.

Min.

Max.

6.80

5.50

7.20

7.80

Min.

Max.

0.70

2.40

0.55

0.60

1.50

5.80

6.40

5.20

6.80

7.20

0.50

2.20

0.45

0.90

5.40

2.30 REF.

0.60

0.90

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±25

Continuous Drain Current, V_GS@10V

Pulsed Drain Current¹

I_D@T

I_DM

P_D@T =25к

=25к

-75

=100к

-50

-300

Total Power Dissipation

W/к

Linear Derating Factor

0.71

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-case

Rthj-amb

Value

1.4

Unit

к/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

110

I6679

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