ISSUED DATE :2005/05/06
REVISED DATE :
GTM
CORPORATION
GI5706
N P N E P I T A X I A L P L A N A R S I L I C O N T R A N S I S T O R
Description
The G
I5706 is designed high current switching applications.
Features
*Large current capacitance
*Low collector-to-emitter saturation voltage
*High-speed switching
*High allowable power dissipation
Package Dimensions
TO-251
Millimeter
Millimeter
REF.
REF.
Min.
Max.
6.80
5.50
7.20
7.80
Min.
Max.
0.70
2.40
0.55
0.60
1.50
5.80
A
B
C
D
E
F
6.40
5.20
6.80
7.20
G
H
J
K
L
0.50
2.20
0.45
0.45
0.90
5.40
2.30 REF.
0.60
0.90
M
Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
Ratings
Unit
V
V
V
V
V
V
V
V
CBO
CES
CEO
EBO
80
80
50
6
5
I
C
A
Collector Current(Pulse)
I
CP
7.5
A
Base Current
Junction Temperature
Storage Temperature
I
Tj
TsTG
P
B
1.2
A
+150
-55 ~ +150
0.8
к
к
W
W
D
Total Power Dissipation
PD
(T
C
=25к)
15
Electrical Characteristics (Rating at Ta=25к)
Symbol
BVCBO
Min.
Typ.
Max.
Unit
V
V
V
V
uA
uA
mV
mV
V
Test Conditions
80
-
-
I
I
I
I
V
V
C
C
C
=10uA, IE=0
=100uA, RBE=0
=1mA, RBE=∞
BVCES
BVCEO
BVEBO
80
50
6
-
-
-
-
-
-
-
-
1
E
=10uA, I
CB=40V, I
EB=4V, I =0
C
=0
I
CBO
E=0
I
EBO
-
-
-
-
-
-
-
-
1
135
240
1.2
C
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*hFE
l
l
l
C
C
C
=1A, I
=2A, I
=2A, I
CE=2V, I
CE=10V, I
CB=10V, f=1MHz
B
B
B
=50mA
=100mA
=100mA
200
-
560
V
V
V
C
=500mA
C=500mA
fT
Cob
ton (Turn-On Time)
tstg (Storage Time)
tf (Fall Time)
-
-
-
-
-
400
15
35
300
20
-
-
-
-
-
MHz
pF
ns
ns
ns
See specified test circuit.
See specified test circuit.
See specified test circuit.
G
I5706
Page: 1/3