Datasheet > GI5103

GI5103

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体开关晶体管
页数	文件大小	规格书
3页	414K
描述
NPN HIGH SPEED SWITCHING TRANSISTOR

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数据手册

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GI5103 数据手册

ISSUED DATE :2005/10/03

REVISED DATE :

GTM

CORPORATION

5103

N P N H I G H S P E E D S W I T C H I N G T R A N S I S T O R

Description

The GI5103 is designed for high speed switching applications.

Features

ԦLow saturation voltage, typically VCE(sat) =0.15V at I

B=3A/0.15A

ԦHigh speed switching, typically tf =0.1ꢀs at I

ԦWide SOA

C=3A

ԦComplements to GI1952

Package Dimensions

TO-251

Millimeter

REF.

Min.

Max.

6.80

5.50

7.20

7.80

Min.

Max.

0.70

2.40

0.55

0.60

1.50

5.80

6.40

5.20

6.80

7.20

0.50

2.20

0.45

0.90

5.40

2.30 REF.

0.60

0.90

Absolute Maximum Ratings (T

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

=25к)

Symbol

Ratings

100

Unit

CBO

CEO

EBO

Collector Current (DC)

Collector Current (Pulse PW=100ms)

Total Device Dissipation (T

Junction Temperature

=25к)

150

Storage Temperature

Tstg

-55 ~ +150

Electrical Characteristics (TA = 25к unless otherwise noted)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

BVCEO

BVEBO

100

=50uA, I

=1mA, I

=50uA, I

CB=100V, I

EB=5V, I =0

CBO

0.3

0.5

1.2

1.5

270

EBO

*VCE(sat)

*VBE(sat)

0.15

=3A, I

=4A, I

=3A, I

=4A, I

=0.15A

=0.2A

=0.15A

=0.2A

*hFE

120

CE=2V, I

CB=10V, I

CE=10V, I

=1A

=3A

210

MHz

=-0.5A, f=30MHz

=0, f=1MHz

Cob

I5103

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