Datasheet > GI494

GI494

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	256K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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GI494 数据手册

Pb Free Plating Product

ISSUED DATE :2006/12/07

REVISED DATE :

GTM

CORPORATION

BVDSS

DS(ON)

30V

11mꢀ

55A

GI494

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GI494 uses advanced trench technology to provide excellent on-resistance and low gate charge.

The through-hole version (TO-251) is available for low-profile applications and suited for use as a high side

switch in SMPS and general purpose applications.

Features

*Simple Drive Requirement

*Lower On-resistance

*Fast Switching Characteristic

Package Dimensions

TO-251

Millimeter

REF.

Min.

Max.

6.80

5.50

7.20

7.80

Min.

Max.

0.70

2.40

0.55

0.60

1.50

5.80

6.40

5.20

6.80

7.20

0.50

2.20

0.45

0.90

5.40

2.30 REF.

0.60

0.90

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±12

Continuous Drain Current, V_GS@10V

Pulsed Drain Current¹

I_D@T

I_DM

P_D@T =25к

=25к

=100к

120

Total Power Dissipation

W/к

Linear Derating Factor

0.42

-55 ~ +175

Operating Junction and Storage Temperature Range

Tj, Tstg

Thermal Data

Parameter

Symbol

Rthj-c

Value

2.4

Unit

к/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Rthj-a

I494

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