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GI42C PDF预览

GI42C

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
GTM 晶体晶体管局域网
页数 文件大小 规格书
2页 145K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

GI42C 数据手册

 浏览型号GI42C的Datasheet PDF文件第2页 
ISSUED DATE :2005/05/12  
REVISED DATE :  
GTM  
CORPORATION  
GI42C  
P N P E P I T AX I A L P L A N A R T R A N S I S T O R  
Description  
The GI42C is designed for use in general purpose amplifier and switching applications.  
Features  
*Complementary to GI41C  
Package Dimensions  
TO-251  
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
Max.  
6.80  
5.50  
7.20  
7.80  
Min.  
0.50  
2.20  
0.45  
0.45  
0.90  
5.40  
Max.  
0.70  
2.40  
0.55  
0.60  
1.50  
5.80  
A
B
C
D
E
F
6.40  
5.20  
6.80  
7.20  
G
H
J
K
L
2.30 REF.  
0.60  
0.90  
M
Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Junction Temperature  
Symbol  
Ratings  
Unit  
V
V
V
A
V
CBO  
-100  
-100  
VCEO  
V
EBO  
-5  
I
I
C
C
-6  
-10  
+150  
-55 ~ +150  
2
A
Tj  
к
к
W
W
Storage Temperature  
TsTG  
P
D
Total Power Dissipation  
PD  
(TC  
=25к)  
20  
Electrical Characteristics (Rating at Ta=25к)  
Symbol  
BVCBO  
Min.  
Typ.  
Max.  
-
Unit  
V
V
Test Conditions  
-100  
-
-
-
-
-
-
-
-
-
-
-
I
I
I
V
V
V
C
=-1mA, I  
=-30mA, I  
=-100uA, I  
CE=-100V, VEB=0V  
CE=-60V, I =0  
EB=-5V, I =0  
=-6A, I =-600mA  
E
=0  
=0  
=0  
*BVCEO  
-100  
-
C
B
BVEBO  
-5  
-
-
-
-
-
V
E
C
I
I
I
CES  
CEO  
EBO  
-10  
-50  
-500  
-1.5  
-2.0  
-
uA  
uA  
uA  
V
B
C
*VCE(sat)  
*VBE(on)  
*hFE1  
*hFE2  
fT  
I
C
B
-
V
V
V
V
V
CE=-4V, I  
CE=-4V, I  
CE=-4V, I  
C
C
C
=-6A  
30  
15  
3
=-300mA  
75  
-
=-3A  
MHz  
CE=-10V, IC=-500mA, f=1MHz  
* Pulse Test: Pulse WidthЉ380s, Duty CycleЉ2%  
G
I42C  
Page: 1/2  

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