Datasheet > GI3310

GI3310

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
5页	247K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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GI3310 数据手册

Pb Free Plating Product

ISSUED DATE :2005/12/05

REVISED DATE :

GTM

CORPORATION

BVDSS

DS(ON)

-20V

150mꢀ

-10A

GI3310

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GI3310 provide the designer with the best combination of fast switching, low on-resistance and

cost-effectiveness.

The through-hole version (TO-251) is available for low-profile applications and suited for low voltage and

battery power applications.

Features

*Simple Drive Requirement

*2.5V Gate Drive Capability

Package Dimensions

TO-251

Millimeter

REF.

Min.

Max.

6.80

5.50

7.20

7.80

Min.

Max.

0.70

2.40

0.55

0.60

1.50

5.80

6.40

5.20

6.80

7.20

0.50

2.20

0.45

0.90

5.40

2.30 REF.

0.60

0.90

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

-20

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±12

Continuous Drain Current, V_GS@10V

Pulsed Drain Current¹

I_D@T

I_DM

P_D@T =25к

=25к

-10

=100к

-6.2

-24

Total Power Dissipation

W/к

Linear Derating Factor

0.01

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-c

Value

5.0

Unit

к/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Rthj-a

110

I3310

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