Datasheet > GI3303

GI3303

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	286K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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GI3303 数据手册

Pb Free Plating Product

ISSUED DATE :2005/08/16

GTM

CORPORATION

REVISED DATE :

BVDSS

DS(ON)

25V

25mΩ

28A

GI3303

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GI3303 provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The through-hole version (TO-251) is available for low-profile applications and suited for low voltage applications

such as DC/DC converters.

Features

*Low Gate Charge

*Simple Drive Requirement

*Fast Switching

Package Dimensions

TO-251

Millimeter

REF.

Min.

Max.

6.80

5.50

7.20

7.80

Min.

Max.

0.70

2.40

0.55

0.60

1.50

5.80

6.40

5.20

6.80

7.20

0.50

2.20

0.45

0.90

5.40

2.30 REF.

0.60

0.90

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

f20

I_D@T

I_DM

P_D@T =25к

=25к

Continuous Drain Current, V_GS@10V

Pulsed Drain Current¹

=100к

130

Total Power Dissipation

W/ć

Linear Derating Factor

0.25

-55 ~ +150

Operating Junction and Storage Temperature Range

Tj, Tstg

Thermal Data

Parameter

Symbol

Rthj-case

Rthj-amb

Value

4.0

Unit

ć/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

110

I3303

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