Datasheet > GI3055

GI3055

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
5页	267K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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GI3055 数据手册

Pb Free Plating Product

ISSUED DATE :2006/05/12

REVISED DATE :2007/01/25C

GTM

CORPORATION

BVDSS

DS(ON)

30V

26mꢀ

15A

GI3055

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GI3055 provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The through-hole version (TO-251) is available for low-profile applications and suited for low voltage

applications such as DC/DC converters.

Features

*Low Gate Charge

*Simple Drive Requirement

*Fast Switching

Package Dimensions

TO-251

Millimeter

REF.

Min.

Max.

6.80

5.50

7.20

7.80

Min.

0.50

2.20

0.45

0.90

5.40

Max.

0.70

2.40

0.55

0.60

1.50

5.80

6.40

5.20

6.80

7.20

2.30 REF.

0.60

0.90

Absolute Maximum Ratings

Parameter

Symbol

V_GS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

Continuous Drain Current, V_GS@10V

Pulsed Drain Current¹

I_D@T

I_DM

P_D@T =25к

=25к

=100к

Total Power Dissipation

W/к

Linear Derating Factor

0.22

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-c

Value

4.8

Unit

к/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Rthj-a

110

I3055

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