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GI20T03 PDF预览

GI20T03

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
GTM /
页数 文件大小 规格书
4页 245K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GI20T03 数据手册

 浏览型号GI20T03的Datasheet PDF文件第2页浏览型号GI20T03的Datasheet PDF文件第3页浏览型号GI20T03的Datasheet PDF文件第4页 
Pb Free Plating Product  
ISSUED DATE :2005/11/24  
REVISED DATE :  
GTM  
CORPORATION  
BVDSS  
DS(ON)  
30V  
50m  
12.5A  
GI20T03  
R
I
D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET  
Description  
The GI20T03 provide the designer with the best combination of fast switching, ruggedized device design, low  
on-resistance and cost-effectiveness.  
The through-hole version (TO-251) is available for low-profile applications and suited for low voltage  
applications such as DC/DC converters.  
Features  
*Low Gate Charge  
*Simple Drive Requirement  
*Fast Switching Characteristic  
Package Dimensions  
TO-251  
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
Max.  
6.80  
5.50  
7.20  
7.80  
Min.  
0.50  
2.20  
0.45  
0.45  
0.90  
5.40  
Max.  
0.70  
2.40  
0.55  
0.60  
1.50  
5.80  
A
B
C
D
E
F
6.40  
5.20  
6.80  
7.20  
G
H
J
K
L
2.30 REF.  
0.60  
0.90  
M
Absolute Maximum Ratings  
Parameter  
Symbol  
VDS  
Ratings  
Unit  
Drain-Source Voltage  
30  
±20  
V
V
Gate-Source Voltage  
VGS  
Continuous Drain Current  
Continuous Drain Current  
Pulsed Drain Current1  
ID @T  
ID @T  
IDM  
PD @T =25к  
C
=25к  
12.5  
8
A
C
=100к  
A
40  
A
Total Power Dissipation  
C
12.5  
0.1  
W
W/к  
к
Linear Derating Factor  
Operating Junction and Storage Temperature Range  
Tj, Tstg  
-55 ~ +150  
Thermal Data  
Parameter  
Symbol  
Rthj-c  
Value  
10  
Unit  
к/W  
к/W  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
Rthj-a  
110  
G
I20T03  
Page: 1/4  

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