Datasheet > GI122

GI122

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
3页	161K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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数据手册

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GI122 数据手册

ISSUED DATE :2004/12/15

REVISED DATE :2005/12/23B

GTM

CORPORATION

GI122

N P N E P I T A X I A L P L AN A R T R A N S I S T O R

Description

The GI122 is designed for use in general purposes and low speed switching applications.

Features

ԦHigh DC current gain

ԦBuilt-in a damper diode at E-C

Package Dimensions

TO-251

Millimeter

REF.

Min.

6.40

5.20

6.80

7.20

Max.

6.80

5.50

7.20

7.80

Min.

0.50

2.20

0.45

0.90

5.40

Max.

0.70

2.40

0.55

0.60

1.50

5.80

2.30 REF.

0.60

0.90

Absolute Maximum Ratings at Ta = 25к

Parameter

Symbol

Ratings

Unit

Junction Temperature

Storage Temperature

+150

Tstg

-55 ~ +150

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

BVCBO

BVCEO

BVEBO

100

Total Power Dissipation(Tc=25к)

Electrical Characteristics (Rating at 25к ambient temperature unless otherwise specified)

Symbol

BVCBO

BVCEO

BVEBO

Min.

100

Typ.

Max.

Unit

Test Conditions

=1mA, I

=30mA, I

=1mA, I

E=0

B=0

CBO

CEO

EBO

2.5

ꢀA

CB=100V, I

CE=50V, I =0

EB=5V, I =0

E=0

*VCE(sat)

*VBE(sat)

*VBE(on)

=3A, I

=5A, I

B=16mA

B=20mA

B=50mA

CE=3V, I

=3A

hFE

=500mA

=3A

CB=10V, f=1MHz

hFE

Cob

200

* Pulse Test: Pulse WidthЉ380ꢀs, Duty CycleЉ2%

GI122

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