Datasheet > GI1060

GI1060

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
3页	398K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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数据手册

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GI1060 数据手册

ISSUED DATE :2005/09/05

REVISED DATE :

GTM

CORPORATION

The G

1060

N P N E P I T A X I A L P L A N A R T R A N S I S T O R

Description

IJ1060 is designed for relay drivers, high-speed inverters, converters and other general large-current

switching.

Features

ԦLow Collector-Emitter Saturation Voltage : VCE (sat) =0.4V (Max.) @ IC=3A, IB=0.3A,

Package Dimensions

TO-251

Millimeter

REF.

Min.

Max.

6.80

5.50

7.20

7.80

Min.

Max.

0.70

2.40

0.55

0.60

1.50

5.80

6.40

5.20

6.80

7.20

0.50

2.20

0.45

0.90

5.40

2.30 REF.

0.60

0.90

Absolute Maximum Ratings (T

Parameter

=25к)

Symbol

Ratings

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

CBO

CEO

EBO

Collector Current (Pulse)

Total Device Dissipation (T

Junction Temperature

Storage Temperature

=25к)

150

Tstg

-55 ~ +150

Electrical Characteristics (T

A = 25к unless otherwise noted)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

=1mA, I

BVCEO

BVEBO

=1mA, I

E=1mA, I

CBO

100

CB=40V, I

EB=4V, I

=3A, I

E=0

EBO

100

*VCE(sat)

0.4

=0.3A

*hFE

280

CE=2V, I

CE=5V, I

=1A

=3A

=1A

100

0.1

1.4

0.2

MHz

Cob

CB=10V, IE=0, f=1MHz

on (Turn-on Time)

stg (Storage Time)

(Fall Time)

See specified test circuit

*Pulse Test: Pulse WidthЉ380ꢀs, Duty CycleЉ2%

I1060

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