Datasheet > GESD880

GESD880

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	149K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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数据手册

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GESD880 数据手册

ISSUED DATE :2005/12/12

REVISED DATE :

GTM

CORPORATION

GESD880

The GESD880 is designed for audio frequency power amplifier application.

N P N E P I T A X I A L P L A N A R T R A N S I S T O R

Description

Features

ԦHigh DC Current Gain: hFE = 300 (Max.) @ VCE = 5V, IC = 0.5A

ԦLow Saturation Voltage: VCE (sat) = 1.0V (Max.) @ I

= 3A, I

= 0.3A

Package Dimensions

Millimeter

REF.

Min.

Max.

4.80

1.00

0.50

9.00

10.4

15.3

6.60

Min.

1.25

1.17

Max.

1.45

1.47

4.40

0.76

0.36

8.60

9.80

14.7

6.20

13.25

14.25

2.54 REF.

2.60

3.71

2.60

2.89

3.96

2.80

Absolute Maximum Ratings (T

Parameter

=25к)

Symbol

Ratings

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

CBO

CEO

EBO

1.5

Collector Power Dissipation (T

Junction Temperature

=25к)

150

Storage Temperature

Tstg

-55 ~ +150

Electrical Characteristics (TA = 25к unless otherwise noted)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

=100uA, I

=50mA, I

=100uA, I

CB=80V, I

EB=7V, I =0

BVCEO

BVEBO

CBO

1.0

1.5

1.0

300

EBO

*VCE(sat)

*VBE(sat)

*VBE(ON)

*hFE

=3A, I

=2A, I

=0.3A

=0.2A

CE=5V, I

=500mA

=0.5A

=-0.5A

=0, f=1MHz

MHz

Cob

CB=10V, I

*Pulse Test: Pulse WidthЉ380ꢀs, Duty CycleЉ2%

Classification Of hFE

Rank

Range

60 ~ 120

100 ~ 200

150 ~ 300

GESD880

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