ISSUED DATE :2005/09/05
REVISED DATE :
GTM
CORPORATION
GESD1060
N P N E P I T A X I A L P L A N A R T R A N S I S T O R
Description
The GESD1060 is designed for relay drivers, high-speed inverters, converters and other general large-current
switching.
Features
ԦLow Collector-Emitter Saturation Voltage : VCE (sat) =0.4V (Max.) @ IC=3A, IB=0.3A,
Package Dimensions
Millimeter
Millimeter
REF.
REF.
Min.
Max.
4.80
1.00
0.50
9.00
10.4
15.3
6.60
Min.
1.25
1.17
Max.
1.45
1.47
A
b
c
D
E
L4
L5
4.40
0.76
0.36
8.60
9.80
14.7
6.20
c1
b1
L
e
L1
Ø
A1
13.25
14.25
2.54 REF.
2.60
3.71
2.60
2.89
3.96
2.80
Absolute Maximum Ratings (T
Parameter
A
=25к)
Symbol
Ratings
Unit
V
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
V
CBO
60
V
CEO
50
V
V
EBO
6
V
I
C
5
A
Collector Current (Pulse)
I
CP
9
30
A
Total Device Dissipation (T
Junction Temperature
Storage Temperature
C
=25к)
P
D
W
к
к
T
J
150
T
stg
-55 ~ +150
Electrical Characteristics (TA = 25к unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
60
50
6
-
-
-
V
I
I
I
C
C
=1mA, I
E
B
C
=0
=0
=0
BVCEO
BVEBO
-
-
-
V
=1mA, I
-
V
E=1mA, I
I
I
CBO
-
100
uA
uA
V
V
CB=40V, I
EB=4V, I
=3A, I
E=0
EBO
-
-
100
V
C
=0
*VCE(sat)
-
-
0.4
I
C
B=0.3A
*hFE
*hFE
fT
1
70
30
-
-
280
V
V
V
V
CE=2V, I
CE=2V, I
CE=5V, I
C
C
C
=1A
=3A
=1A
2
-
-
-
-
-
-
-
30
100
0.1
1.4
0.2
MHz
pF
Cob
-
CB=10V, IE=0, f=1MHz
t
t
t
on (Turn-on Time)
stg (Storage Time)
(Fall Time)
-
uS
See specified test circuit
-
f
-
*Pulse Test: Pulse WidthЉ380ꢀs, Duty CycleЉ2%
GESD1060
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