Datasheet > GE9971

GE9971

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	240K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

GE9971 数据手册

Pb Free Plating Product

ISSUED DATE :2005/11/03

REVISED DATE :

GTM

CORPORATION

BVDSS

DS(ON)

60V

36mꢀ

25A

GE9971

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GE9971 provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The TO-220 package is universally preferred for all commercial-industrial applications and suited for low

voltage applications such as DC/DC converters.

Features

*Simple Drive Requirement

*Low On-resistance

Package Dimensions

Millimeter

REF.

Min.

Max.

4.80

1.00

0.50

9.00

10.4

15.3

6.60

Min.

1.25

1.17

Max.

1.45

1.47

4.40

0.76

0.36

8.60

9.80

14.7

6.20

13.25

14.25

2.54 REF.

2.60

3.71

2.60

2.89

3.96

2.80

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

Continuous Drain Current, V_GS@10V

Pulsed Drain Current¹

I_D@T

I_DM

P_D@T =25к

=25к

=100к

Total Power Dissipation

W/к

Linear Derating Factor

0.31

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-c

Rthj-a

Value

3.2

Unit

к/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

GE9971

Page: 1/4

12 3 4

下载PDF

与GE9971相关器件

型号	品牌	描述	获取价格	数据表
GE9973	GTM	N-CHANNEL ENHANCEMENT MODE POWER MOSFET	获取价格
GE9K-DIE	ETC	ASIC	获取价格
GEA.00.240.LN	ETC	HEX NUT M7X0.5 FOR .00.	获取价格
GEA.0E.240.AZ	ETC	HEX NUT M14X1 FOR 0E-0K-0L-1S-1B	获取价格
GEA.0E.240.LN	ETC	HEX NUT M14X1 FOR 0E-0K-0L-1S-1B	获取价格
GEA.0S.240.LN	ETC	HEX NUT M9X0.6 FOR 0S-0B	获取价格