Pb Free Plating Product
ISSUED DATE :2005/08/30
GTM
CORPORATION
REVISED DATE :
BVDSS
DS(ON)
400V
1.0Ω
5.5A
GE730
R
I
D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GE730 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 is universally preferred for all commercial-industrial applications. The device is suited for switch
mode power supplies, DC-AC converters and high current high speed switching circuits.
Features
*Dynamic dv/dt Rating
*Repetitive Avalanche Rated
*Simple Drive Requirement
*Fast Switching
Package Dimensions
Millimeter
Millimeter
REF.
REF.
Min.
Max.
4.80
1.00
0.50
9.00
10.4
15.3
6.60
Min.
1.25
1.17
Max.
1.45
1.47
A
b
c
D
E
L4
L5
4.40
0.76
0.36
8.60
9.80
14.7
6.20
c1
b1
L
e
L1
Ø
A1
13.25
14.25
2.54 REF.
2.60
3.71
2.60
2.89
3.96
2.80
Absolute Maximum Ratings
Parameter
Symbol
VDS
Ratings
400
f30
5.5
Unit
Drain-Source Voltage
V
V
Gate-Source Voltage
VGS
ID @T
ID @T
IDM
PD @T =25к
C
=25к
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
A
C
=100к
3.5
A
23
A
C
Total Power Dissipation
74
W
Linear Derating Factor
Single Pulse Avalanche Energy2
0.59
260
5.5
W/ć
mJ
A
EAS
IAR
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and Storage Temperature Range
EAR
7
mJ
ć
Tj, Tstg
-55 ~ +150
Thermal Data
Parameter
Symbol
Rthj-c
Value
1.7
Unit
ć/W
ć/W
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Rthj-a
62
GE730
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