Datasheet > GE60T03

GE60T03

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	248K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

GE60T03 数据手册

Pb Free Plating Product

ISSUED DATE :2005/11/22

REVISED DATE :

GTM

CORPORATION

BVDSS

DS(ON)

30V

12mꢀ

45A

GE60T03

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GE60T03 provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The through-hole version (TO-220) is available for low-profile applications and suited for low voltage

applications such as DC/DC converters.

Features

*Low Gate Charge

*Simple Drive Requirement

*Fast Switching Speed

*RoHS Compliant

Package Dimensions

Millimeter

REF.

Min.

Max.

4.80

1.00

0.50

9.00

10.4

15.3

6.60

Min.

1.25

1.17

Max.

1.45

1.47

4.40

0.76

0.36

8.60

9.80

14.7

6.20

13.25

14.25

2.54 REF.

2.60

3.71

2.60

2.89

3.96

2.80

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

Continuous Drain Current, V_GS@10V

Pulsed Drain Current¹

I_D@T

I_DM

P_D@T =25к

=25к

=100к

120

Total Power Dissipation

W/к

Linear Derating Factor

0.352

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +175

Thermal Data

Parameter

Symbol

Rthj-c

Value

3.4

Unit

к/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Rthj-a

GE60T03

Page: 1/4

12 3 4

下载PDF

与GE60T03相关器件

型号	品牌	描述	获取价格	数据表
GE630	GTM	N-CHANNEL ENHANCEMENT MODE POWER MOSFET	获取价格
GE6679	GTM	P-CHANNEL ENHANCEMENT MODE POWER MOSFET	获取价格
GE680K	CDE	Disc Ceramic Capacitors	获取价格
GE680K		General Purpose Disc Ceramic Capacitors	获取价格
GE681K		General Purpose Disc Ceramic Capacitors	获取价格
GE681K	CDE	Disc Ceramic Capacitors	获取价格