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GE60N03 PDF预览

GE60N03

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
GTM /
页数 文件大小 规格书
5页 272K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GE60N03 数据手册

 浏览型号GE60N03的Datasheet PDF文件第2页浏览型号GE60N03的Datasheet PDF文件第3页浏览型号GE60N03的Datasheet PDF文件第4页浏览型号GE60N03的Datasheet PDF文件第5页 
Pb Free Plating Product  
ISSUED DATE :2005/01/25  
REVISED DATE :2005/10/19B  
GTM  
CORPORATION  
BVDSS  
DS(ON)  
30V  
16.5m  
55A  
GE60N03  
R
I
D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET  
Description  
The GE60N03 provide the designer with the best combination of fast switching, ruggedized device design, low  
on-resistance and cost-effectiveness.  
The TO-220 package is universally preferred for all commercial-industrial applications and suited for low  
voltage application such as DC/DC converters and high efficiency switching circuit.  
Features  
*Dynamic dv/dt Rating  
*Simple Drive Requirement  
*Repetitive Avalanche Rated  
*Fast Switching  
Package Dimensions  
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
Max.  
4.80  
1.00  
0.50  
9.00  
10.4  
15.3  
6.60  
Min.  
1.25  
1.17  
Max.  
1.45  
1.47  
A
b
c
D
E
L4  
L5  
4.40  
0.76  
0.36  
8.60  
9.80  
14.7  
6.20  
c1  
b1  
L
e
L1  
Ø
13.25  
14.25  
2.54 REF.  
2.60  
3.71  
2.60  
2.89  
3.96  
2.80  
A1  
Absolute Maximum Ratings  
Parameter  
Symbol  
VDS  
Ratings  
30  
Unit  
Drain-Source Voltage  
V
V
Gate-Source Voltage  
VGS  
±20  
55  
Continuous Drain Current, VGS@10V  
Continuous Drain Current, VGS@10V  
Pulsed Drain Current1  
ID @T  
ID @T  
IDM  
PD @T =25к  
C
=25к  
A
C
=100к  
35  
A
215  
62.5  
0.5  
A
Total Power Dissipation  
C
W
W/к  
к
Linear Derating Factor  
Operating Junction and Storage Temperature Range  
Tj, Tstg  
-55 ~ +150  
Thermal Data  
Parameter  
Symbol  
Rthj-c  
Value  
2.0  
Unit  
к/W  
к/W  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
Rthj-a  
62  
GE60N03  
Page: 1/5  

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