Pb Free Plating Product
ISSUED DATE :2005/01/25
REVISED DATE :2005/10/19B
GTM
CORPORATION
BVDSS
DS(ON)
30V
16.5mꢀ
55A
GE60N03
R
I
D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GE60N03 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications and suited for low
voltage application such as DC/DC converters and high efficiency switching circuit.
Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching
Package Dimensions
Millimeter
Millimeter
REF.
REF.
Min.
Max.
4.80
1.00
0.50
9.00
10.4
15.3
6.60
Min.
1.25
1.17
Max.
1.45
1.47
A
b
c
D
E
L4
L5
4.40
0.76
0.36
8.60
9.80
14.7
6.20
c1
b1
L
e
L1
Ø
13.25
14.25
2.54 REF.
2.60
3.71
2.60
2.89
3.96
2.80
A1
Absolute Maximum Ratings
Parameter
Symbol
VDS
Ratings
30
Unit
Drain-Source Voltage
V
V
Gate-Source Voltage
VGS
±20
55
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @T
ID @T
IDM
PD @T =25к
C
=25к
A
C
=100к
35
A
215
62.5
0.5
A
Total Power Dissipation
C
W
W/к
к
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Thermal Data
Parameter
Symbol
Rthj-c
Value
2.0
Unit
к/W
к/W
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Rthj-a
62
GE60N03
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