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GE2761 PDF预览

GE2761

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
GTM /
页数 文件大小 规格书
4页 298K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GE2761 数据手册

 浏览型号GE2761的Datasheet PDF文件第2页浏览型号GE2761的Datasheet PDF文件第3页浏览型号GE2761的Datasheet PDF文件第4页 
Pb Free Plating Product  
ISSUED DATE :2005/05/18  
GTM  
CORPORATION  
REVISED DATE :  
BVDSS  
DS(ON)  
600/650V  
GE2761  
R
1.0  
I
D
10A  
N-CHANNEL ENHANCEMENT MODE POWER MOSFET  
Description  
The GE2761 series provide the designer with best combination of fast switching, ruggedized device design, low  
on-resistance and cost-effectiveness.  
The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications  
such as DC/DC converters.  
Features  
*Low On-resistance  
*Simple Drive Requirement  
*RoHS Compliant  
*Fast Switching Characteristic  
Package Dimensions  
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
Max.  
4.80  
1.00  
0.50  
9.00  
10.4  
15.3  
6.60  
Min.  
1.25  
1.17  
Max.  
1.45  
1.47  
A
b
c
D
E
L4  
L5  
4.40  
0.76  
0.36  
8.60  
9.80  
14.7  
6.20  
c1  
b1  
L
e
L1  
Ø
A1  
13.25  
14.25  
2.54 REF.  
2.60  
3.71  
2.60  
2.89  
3.96  
2.80  
Absolute Maximum Ratings  
Parameter  
Symbol  
VDS  
Ratings  
600/650  
f30  
10  
Unit  
Drain-Source Voltage  
- /A  
V
V
Gate-Source Voltage  
VGS  
ID @T  
ID @T  
IDM  
PD @T =25к  
C
=25к  
Continuous Drain Current , VGS@10V  
Continuous Drain Current , VGS@10V  
Pulsed Drain Current1  
A
C
=100к  
4.4  
A
18  
A
C
Total Power Dissipation  
Linear Derating Factor  
104  
W
W/ć  
A
0.8  
Avalanche Current  
IAR  
10  
Operating Junction and Storage Temperature Range  
Tj, Tstg  
-55 ~ +150  
ć
Thermal Data  
Parameter  
Symbol  
Rthj-c  
Value  
1.2  
Unit  
ć/W  
ć/W  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
Rthj-a  
62  
GE2761  
Page: 1/4  

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