Datasheet > GE20N03

GE20N03

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
5页	296K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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GE20N03 数据手册

Pb Free Plating Product

ISSUED DATE :2005/06/28

GTM

CORPORATION

REVISED DATE :

BVDSS

DS(ON)

30V

52mΩ

20A

GE20N03

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GE20N03 provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The TO-220 package is universally preferred for all commercial-industrial applications and suited for low

voltage applications such as DC/DC converters.

Features

*Dynamic dv/dt Rating

*Repetitive Avalanche Rated

*Simple Drive Requirement

*Fast Switching

Package Dimensions

Millimeter

REF.

Min.

Max.

4.80

1.00

0.50

9.00

10.4

15.3

6.60

Min.

1.25

1.17

Max.

1.45

1.47

4.40

0.76

0.36

8.60

9.80

14.7

6.20

13.25

14.25

2.54 REF.

2.60

3.71

2.60

2.89

3.96

2.80

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

f20

I_D@T

I_DM

P_D@T =25к

=25к

Continuous Drain Current, V_GS@10V

Pulsed Drain Current¹

=100к

Total Power Dissipation

W/ć

Linear Derating Factor

0.25

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-c

Value

4.0

Unit

ć/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Rthj-a

GE20N03

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