Datasheet > GE2026

GE2026

更新时间： 2022-04-23 23:00:11

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GTM		晶体晶体管局域网
页数	文件大小	规格书
3页	385K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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GE2026 数据手册

ISSUED DATE :2005/09/05

REVISED DATE :

GTM

CORPORATION

GE2026

The GE2026 is designed for general purpose application.

N P N E P I T AX I A L P L A N A R T R A N S I S T O R

Description

Features

ԦLow Collector Saturation Voltage : VCE (sat) =1.0V (Max.) @ I

=2A, IB=0.2A,

Package Dimensions

Millimeter

REF.

Min.

4.40

0.76

0.36

8.60

9.80

14.7

6.20

Max.

4.80

1.00

0.50

9.00

10.4

15.3

6.60

Min.

1.25

1.17

Max.

1.45

1.47

13.25

14.25

2.54 REF.

2.60

3.71

2.60

2.89

3.96

2.80

Absolute Maximum Ratings (T

Parameter

=25к)

Symbol

Ratings

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

CBO

CEO

EBO

Base Current

0.5

=25к

Total Device

Dissipation

=25к

Junction Temperature

Storage Temperature

150

Tstg

-55 ~ +150

Electrical Characteristics (TA = 25к unless otherwise noted)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

=100uA, I

=50mA, I

=100uA, I

CB=60V, I

EB=7V, I =0

=2A, I =0.2A

BVCEO

BVEBO

CBO

100

EBO

100

*VCE(sat)

*VBE(on)

1.0

CE=5V, I

=0.5A

=3A

*hFE

100

320

0.65

1.3

0.65

MHz

=0.5A

Cob

CB=10V, IE=0, f=1MHz

on (Turn-on Time)

stg (Storage Time)

(Fall Time)

See specified test circuit

*Pulse Test: Pulse WidthЉ380ꢀs, Duty CycleЉ2%

GE2026

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