Datasheet > GE13007

GE13007

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管
页数	文件大小	规格书
3页	304K
描述
NPN SILICON TRIPLE DIFFUSED MESA TYPE TRANSISTOR

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GE13007 数据手册

ISSUED DATE :2005/01/12

REVISED DATE :

GTM

CORPORATION

GE13007

N P N S I L I C O N T R I P L E D I F F U S E D M E S A T Y P E T R A N S I S T O R

Description

The GE13007 is designed for electronic transformers and power switching circuit applications.

Package Dimensions

Millimeter

REF.

Min.

4.40

0.76

0.36

8.60

9.80

14.7

6.20

Max.

4.80

1.00

0.50

9.00

10.4

15.3

6.60

Min.

1.25

1.17

Max.

1.45

1.47

13.25

14.25

2.54 REF.

2.60

3.71

2.60

2.89

3.96

2.80

Absolute Maximum Ratings at Ta = 25к

Parameter

Junction Temperature

Symbol

Ratings

Unit

+150

Storage Temperature

Tstg

-55 ~ +150

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

CBO

CEO

EBO

700

400

Total Power Dissipation at Tc=25к

Electrical Characteristics(Tc = 25ć Unless otherwise specified)

Parameter

Symbol

Min. Typ. Max. Unit

Test Conditions

Collector-Emitter Sustaining Voltage

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

CEO(sus)

BVCBO

BVEBO

400

=10mA , IB=0

700

=1mA , I

E=1mA , I

CBO

CEO

100

1.2

3.0

1.2

ꢀA

CB=700V

CE=400V

EB=7V

Collector-Emitter Cutoff Current

Emitter-Base Cutoff Current

IEBO

*VCE(sat)1

*VCE(sat)2

*VBE(sat)

=2A, I

=8A, I

=2A, I

=400mA

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

DC Current Gain

=2A

=400mA

*HFE

CE=5V, I

=2A

=5A

*HFE

CE=5V, I

Frequency characteristics

Turn-On Time

MHz

CE=10V, IC=500mA, f=1MHz

ton

tstg

1.6

ꢀs

CC=125V, IC=5A, IB1=IB2=0.4A

Storage Time

Fall Time

0.7

*Pulse Test: Pulse Width=300ꢀs, Duty CycleЉ˅%

GE13007

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