Datasheet > GE13003

GE13003

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管
页数	文件大小	规格书
4页	467K
描述
NPN SILICON POWER TRANSISTOR

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GE13003 数据手册

ISSUED DATE :2005/01/12

REVISED DATE :

GTM

CORPORATION

GE13003

N P N S I L I C O N P O W E R T R A N S I S T O R

Description

The GE13003 is designed for high voltage, high speed power switching inductive circuit where fall time is

critical. It is particularly suited for 115 and 220v Switch-mode.

Features

ԦInductive Switching Matrix 0.5~1.5Amp, 25 and 100кˁˁˁtc @ 1A, 100к is 290ns(Typ)

Ԧ700V Blocking Capability

ԦSOA and Switching Application Information

Package Dimensions

Millimeter

REF.

Min.

Max.

4.80

1.00

0.50

9.00

10.4

15.3

6.60

Min.

1.25

1.17

Max.

1.45

1.47

4.40

0.76

0.36

8.60

9.80

14.7

6.20

13.25

14.25

2.54 REF.

2.60

3.71

2.60

2.89

3.96

2.80

Absolute Maximum Ratings at Ta = 25к

Parameter

Junction Temperature

Symbol

Ratings

Unit

+150

-55 ~ +150

400

Storage Temperature

Tstg

Collector to Emitter Voltage

Emitter to Base Voltage

VCEO(sus)

VCEO

EBO

700

Collector Current -Continuous

-Peak(1)

1.5

3.0

Base Current -Continuous

-Peak(1)

0.75

1.5

Emitter Current -Continuous

-Peak(1)

2.25

4.5

Total Power Dissipation at Ta=25к

Derate above 25к

1.4

mW/к

11.2

Total Power Dissipation at Tc=25к

Derate above 25к

mW/к

320

Thermal Characteristics

Parameter

Symbol

RꢀJA

Value

Unit

Thermal Resistance, Junction-ambient

Thermal Resistance, Junction-case

ć/W

RꢀJC

3.12

Maximum Lead Temperature for Soldering

Purposes:1/8” from Case for 5 Seconds

275

(1)Pulse Test: Pulse Width=5ms, Duty CycleЉ10%

GE13003

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