Datasheet > GE04N70B

GE04N70B

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
5页	281K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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GE04N70B 数据手册

Pb Free Plating Product

ISSUED DATE :2005/01/04

GTM

CORPORATION

REVISED DATE :

BVDSS

DS(ON)

650/700V

GE04N70B

2.4Ω

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GE04N70B series are specially designed as main switching devices for universal 90~265VAC off-line

AC/DC converter applications. TO-220 type provide high blocking voltage to overcome voltage surge and sag

in the toughest power system with the best combination of fast switching, ruggedized design and

cost-effectiveness.

The TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for

switch mode power supplies, DC-AC converters and high current high speed switching circuits.

Features

*Simple Drive Requirement

*Dynamic dv/dt Rating

*Repetitive Avalanche Rated

*Fast Switching

Package Dimensions

Millimeter

REF.

Min.

Max.

4.80

1.00

0.50

9.00

10.4

15.3

6.60

Min.

1.25

1.17

Max.

1.45

1.47

4.40

0.76

0.36

8.60

9.80

14.7

6.20

13.25

14.25

2.54 REF.

2.60

3.71

2.60

2.89

3.96

2.80

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

650/700

f20

Unit

Drain-Source Voltage

A/H

Gate-Source Voltage

V_GS

I_D@T

I_DM

P_D@T =25к

=25к

Continuous Drain Current , V_GS@10V

Pulsed Drain Current^1,

=100к

2.5

Total Power Dissipation

62.5

0.5

Linear Derating Factor

Single Pulse Avalanche Energy²

W/ć

E_AS

I_AR

100

Avalanche Current

Repetitive Avalanche Energy

E_AR

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-c

Value

2.0

Unit

ć/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Rthj-a

GE04N70B

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