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GE03N70 PDF预览

GE03N70

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
GTM /
页数 文件大小 规格书
5页 283K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GE03N70 数据手册

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Pb Free Plating Product  
ISSUED DATE :2005/01/04  
GTM  
CORPORATION  
REVISED DATE :  
BVDSS 600/650/700  
V
GE03N70  
R
DS(ON)  
4.0  
I
D
3.3A  
N-CHANNEL ENHANCEMENT MODE POWER MOSFET  
Description  
The GE03N70 series are specially designed as main switching devices for universal 90~265VAC off-line  
AC/DC converter applications. TO-220 type provide high blocking voltage to overcome voltage surge and sag  
in the toughest power system with the best combination of fast switching, ruggedized design and  
cost-effectiveness.  
The TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for  
switch mode power supplies, DC-AC converters and high current high speed switching circuits.  
Features  
*Dynamic dv/dt Rating  
*Simple Drive Requirement  
*Repetitive Avalanche Rated  
*Fast Switching Speed  
Package Dimensions  
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
Max.  
4.80  
1.00  
0.50  
9.00  
10.4  
15.3  
6.60  
Min.  
1.25  
1.17  
Max.  
1.45  
1.47  
A
b
c
D
E
L4  
L5  
4.40  
0.76  
0.36  
8.60  
9.80  
14.7  
6.20  
c1  
b1  
L
e
L1  
Ø
A1  
13.25  
14.25  
2.54 REF.  
2.60  
3.71  
2.60  
2.89  
3.96  
2.80  
Absolute Maximum Ratings  
Parameter  
Symbol  
VDS  
Ratings  
Unit  
Drain-Source Voltage  
-/A/H  
600/650/700  
V
V
Gate-Source Voltage  
VGS  
f20  
3.3  
ID @T  
ID @T  
IDM  
PD @T =25к  
C
=25к  
Continuous Drain Current , VGS@10V  
Continuous Drain Current , VGS@10V  
Pulsed Drain Current1,  
A
C
=100к  
2.1  
A
13.2  
45  
A
C
Total Power Dissipation  
W
Linear Derating Factor  
Single Pulse Avalanche Energy2  
0.36  
85  
W/ć  
mJ  
A
EAS  
IAR  
Avalanche Current  
3.3  
Repetitive Avalanche Energy  
EAR  
3.3  
mJ  
ć
Operating Junction and Storage Temperature Range  
Tj, Tstg  
-55 ~ +150  
Thermal Data  
Parameter  
Symbol  
Rthj-c  
Value  
2.8  
Unit  
ć/W  
ć/W  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
Rthj-a  
62  
GE03N70  
Page: 1/5  

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