Datasheet > GE02N60

GE02N60

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
5页	248K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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GE02N60 数据手册

Pb Free Plating Product

ISSUED DATE :2005/01/27

REVISED DATE :2005/12/12B

GTM

CORPORATION

BVDSS

DS(ON)

600V

9ꢀ

GE02N60

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GE02N60 provide the designer with the best combination of fast switching.

The TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for

DC-DC, DC-AC converters for telecom, industrial and consumer environment.

Features

*Dynamic dv/dt Rating

*Simple Drive Requirement

*Repetitive Avalanche Rated

*Fast Switching

Package Dimensions

Millimeter

REF.

Min.

Max.

4.80

1.00

0.50

9.00

10.4

15.3

6.60

Min.

1.25

1.17

Max.

1.45

1.47

4.40

0.76

0.36

8.60

9.80

14.7

6.20

13.25

14.25

2.54 REF.

2.60

3.71

2.60

2.89

3.96

2.80

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

600

±20

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

Continuous Drain Current, V_GS@10V

Pulsed Drain Current¹

I_D@T

I_DM

P_D@T =25к

=25к

=100к

1.26

Total Power Dissipation

Linear Derating Factor

Single Pulse Avalanche Energy²

0.31

200

W/к

E_AS

I_AR

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and Storage Temperature Range

E_AR

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-c

Value

3.2

Unit

к/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Rthj-a

GE02N60

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