ISSUED DATE :2005/12/20
REVISED DATE :
GTM
CORPORATION
GDBAS40
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E
V O LT AG E 4 0 V, C U R R E N T 0 . 2 A
Description
The GDBAS40 is designed for high speed switching applications, circuit protection and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand
held and portable applications where space is limited.
Package Dimensions
Millimeter
Millimeter
REF.
REF.
Min.
Max.
1.05
0.10
1.00
1.45
1.80
2.70
Min.
Max.
A
A1
A2
D
E
HE
0.85
0
L
b
c
0.20
0.25
0.10
0.40
0.40
0.18
0.80
1.15
1.60
2.30
Q1
0.15 BSC.
Absolute Maximum Ratings at T
Parameter
A = 25к
Symbol
Tj
Ratings
-55 ~ +125
-55 ~ +150
40
Unit
к
Operating Junction Temperature
Storage Temperature
Tstg
VRRM
RꢀJA
IFSM
Io
к
Maximum Repetitive Peak Reverse Voltage
Thermal Resistance Junction to Ambient Air
Peak Forward Surge Current at tp < 1.0s
Maximum Average Forward Rectified Current
Total Power Dissipation
V
445
к/W
A
0.6
0.2
A
PD
225
mW
Electrical Characteristics (at T
A
= 25к unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Reverse Breakdown Voltage
V
(BR)R
40
-
-
-
-
-
V
IR=10ꢁA
380
1000
200
5.0
IF1=1mA
Forward Voltage(tp < 300uS)
VF
mV
-
IF2=40mA
Reverse Leakage Current
Total Capacitance
IR
-
nA
pF
ns
VR=30V
C
T
-
-
-
VR=0V, f=1MHz
IF=IR=10mA, RL=100ꢂ, Irr=1mA
Reverse Recover Time
T
rr
-
5.0
GDBAS40
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