Datasheet > GDBAS16

GDBAS16

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		二极管开关
页数	文件大小	规格书
2页	116K
描述
SURFACE MOUNT,SWITCHING DIODE

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数据手册

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GDBAS16 数据手册

ISSUED DATE :2006/12/12

REVISED DATE :

GTM

CORPORATION

GDBAS16

S U R F A C E M O U N T, S W I T C H I N G D I O D E

V O LT AG E 8 5 V, C U R R E N T 2 5 0 m A

Description

The GDBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits.

The devices is manufactured by the silicon epitaxial planar process and packed in a plastic surface mount

package.

Package Dimensions

Millimeter

REF.

Min.

Max.

1.05

0.10

1.00

1.45

1.80

2.70

Min.

Max.

0.85

0.20

0.25

0.10

0.40

0.18

0.80

1.15

1.60

2.30

0.15 BSC.

Absolute Maximum Ratings at T

Parameter

A = 25к

Symbol

Ratings

+150

-65 ~ +150

Unit

Junction Temperature

Storage Temperature

Tstg

Reverse Voltage

Repetitive Reverse Voltage

Forward Current

RRM

250

Repetitive Forward Current

Forward Surge Current (1ms)

Total Power Dissipation

500

IFSM

1000

225

Electrical Characteristics (at T

= 25к unless otherwise noted)

Characteristic

Symbol

Min.

Max.

Unit

Test Conditions

Reverse Breakdown Voltage

V(BR

)

=100uA

(1)

715

855

1000

1250

=1mA

(2)

(3)

(4)

=10mA

=50mA

=150mA

Forward Voltage

Reverse Current

=85V

Total Capacitance

Reverse Recovery Time

=0, f=1MHz

Trr

IF=IR=10mA, RL=100ꢀ measured at IR=1mA

GDBAS16

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