Datasheet > GD751SD

GD751SD

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		肖特基二极管
页数	文件大小	规格书
2页	134K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

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数据手册

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GD751SD 数据手册

ISSUED DATE :2004/09/20

REVISED DATE :

GTM CORPORATION

GD751SD

S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E

V O LT AG E 4 0 V, C U R R E N T 0 . 0 3 A

Description

The GD751SD is designed for high speed switching for detection and high reliability.

Package Dimensions

Millimeter

REF.

Min.

Max.

1.05

0.10

1.00

1.45

1.80

2.70

Min.

Max.

0.85

0.20

0.25

0.10

0.40

0.18

0.80

1.15

1.60

2.30

0.15 BSC.

Absolute Maximum Ratings at Ta = 25к

Parameter

Symbol

Ratings

+125

-40 ~ +125

Unit

Junction Temperature

Storage Temperature

Tstg

V_RRM

V_RMS

V_DC

I_FSM

C_J

Maximum Peak Repetitive Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Peak Forward Surge Current at 8.3mSec single half sine-wave

Typical Junction Capacitance between Terminal (Note 1)

Maximum Average Forward Rectified Current

Total Power Dissipation

0.2

2.0

0.03

225

Characteristics at Ta = 25к

Characteristics

Maximum Instantaneous Forward Voltage

Maximum Average Reverse Current

Symbol

V_F

Max

0.37

0.5

Unit

Test Condition

IF = 1mA

VR = 30V

Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 1.0 volt.

2. ESD sensitive product handling required.

GD751SD

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