Datasheet > GD511

GD511

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		二极管开关
页数	文件大小	规格书
2页	230K
描述
SURFACE MOUNT,SWITCHING DIODE

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数据手册

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GD511 数据手册

ISSUED DATE :2004/11/30

REVISED DATE :

GTM

CORPORATION

GD511

S U R F A C E M O U N T, S W I T C H I N G D I O D E

V O LT AG E 8 5 V, C U R R E N T 0 . 1 A

Description

The GD511 is designed for ultra high speed switching application, low forward voltage and fast reverse recovery time.

Package Dimensions

Millimeter

REF.

Min.

0.85

Max.

1.05

0.10

1.00

1.45

1.80

2.70

Min.

Max.

0.20

0.25

0.10

0.40

0.18

0.80

1.15

1.60

2.30

0.15 BSC.

Absolute Maximum Ratings at Ta = 25к

Parameter

Symbol

Ratings

+150

-55 ~ +150

Unit

Junction Temperature

Storage Temperature

Tstg

V_RM

V_R

Maximum Peak Reverse Voltage

Maximum Reverse Voltage

Maximum (Peak) Forward Current

Average Forward Current

I_FM

300

I_O

100

I_FSM

P_D

Surge Current(10ms)

Total Power Dissipation

150

Electrical Characteristics at Ta = 25к

Characteristic

Symbol

V_F(1)

V_F(2)

V_F(3)

I_R

Min.

Typ.

0.6

0.7

0.9

Max.

Unit

Test Conditions

I_F=1mA

Forward Voltage

I_F=10mA

I_F=100mA

V_R=80V

1.2

0.5

4.0

Reverse Current

ꢀA

Total Capacitance

Reverse Recovery Time

C_T

2.2

1.6

V_R=0, f=1MHz

I_F=10mA

Trr

GD511

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