Datasheet > GD491SD

GD491SD

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		肖特基二极管
页数	文件大小	规格书
2页	175K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

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GD491SD 数据手册

ISSUED DATE :2005/07/11

REVISED DATE :

GTM

CORPORATION

GD491SD

S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E

V O LT AG E 2 5 V, C U R R E N T 1 A

Description

The GD491SD is low power rectification for switching power supply.

Package Dimensions

Millimeter

REF.

Min.

Max.

1.05

0.10

1.00

1.45

1.80

2.70

Min.

Max.

0.85

0.20

0.25

0.10

0.40

0.18

0.80

1.15

1.60

2.30

0.15 BSC.

Absolute Maximum Ratings at Ta = 25к

Parameter

Symbol

Ratings

Unit

Operating Junction Temperature

-50 ~ +125

Storage Temperature

Tstg

V_RRM

V_RPS

V_DC

-50 ~ +150

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

Peak Forward Surge Current at 8.3mSec single half sine-wave

Typical Junction Capacitance between Terminal (Note 1)

Total Power Dissipation

I_FSM

C_J

3.0

225

Electrical Characteristics (at T

Parameter

A = 25ć unless otherwise noted)

Symbol

Min.

Max.

Unit

Test Conditions

=100ꢀA

=1A

VR=20V

Reverse Breakdown Voltage

Maximum Instantaneous Forward Voltage

Reverse Leakage Current

V(BR

)

450

200

ꢀA

Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 10 volts.

2. ESD sensitive product handling required.

GD491SD

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