ISSUED DATE :2005/05/20
REVISED DATE :
GTM
CORPORATION
GD421SD
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E
V O LT AG E 4 0 V, C U R R E N T 0 . 1 A
Description
The GD421SD is designed for low power rectification.
Package Dimensions
Millimeter
Millimeter
REF.
REF.
Min.
Max.
1.05
0.10
1.00
1.45
1.80
2.70
Min.
Max.
A
A1
A2
D
E
HE
0.85
0
L
b
c
0.20
0.25
0.10
0.40
0.40
0.18
0.80
1.15
1.60
2.30
Q1
0.15 BSC.
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Tj
Ratings
+125
-40 ~ +125
40
Unit
ć
ć
V
Junction Temperature
Storage Temperature
Tstg
VRRM
VRPS
VDC
IFSM
CJ
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
28
V
Maximum DC Blocking Voltage
40
V
Peak Forward Surge Current at 8.3mSec single half sine-wave
Typical Junction Capacitance between Terminal
Maximum Average Forward Rectified Current
Total Power Dissipation
1.0
A
6.0
pF
A
Io
0.1
PD
225
mW
Characteristics at Ta = 25к
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Reverse Breakdown Voltage
V
(BR)R
40
-
-
-
-
-
-
V
IR=50ꢀA
IF=10mA
IF=100mA
VR=10V
V
F(1)
340
550
30
mV
mV
ꢀA
Forward Voltage
V
F(2)
-
Reverse Leakage Current
IR
-
GD421SD
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