Datasheet > GD420SD

GD420SD

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		肖特基二极管
页数	文件大小	规格书
2页	161K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

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数据手册

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GD420SD 数据手册

ISSUED DATE :2005/12/20

REVISED DATE :

GTM

CORPORATION

GD420SD

S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E

V O LT AG E 4 0 V, C U R R E N T 0 . 1 A

Description

The GD420SD is designed for low power rectification.

Package Dimensions

Millimeter

REF.

Min.

Max.

1.05

0.10

1.00

1.45

1.80

2.70

Min.

Max.

0.85

0.20

0.25

0.10

0.40

0.18

0.80

1.15

1.60

2.30

0.15 BSC.

Absolute Maximum Ratings at T

Parameter

A = 25к

Symbol

Ratings

+125

-40 ~ +125

Unit

Junction Temperature

Storage Temperature

Tstg

V_RRM

V_RMS

V_DC

I_FSM

C_J

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Peak Forward Surge Current at 8.3mSec single half sine-wave

Typical Junction Capacitance between Terminal (Note 1)

Maximum Average Forward Rectified Current

Total Power Dissipation

1.0

6.0

0.1

225

Electrical Characteristics (at T

= 25к unless otherwise noted)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Reverse Breakdown Voltage

(BR)R

IR=100ꢀA

IF=10mA

VR=10V

Maximum Instantaneous Forward Voltage

Maximum Average Reverse Current

450

1.0

Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 10 volts.

2. ESD sensitive product handling required.

GD420SD

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