Datasheet > GD411SD

GD411SD

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		肖特基二极管
页数	文件大小	规格书
2页	127K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

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数据手册

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GD411SD 数据手册

ISSUED DATE :2005/12/20

REVISED DATE :

GTM

CORPORATION

GD411SD

S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E

V O LT AG E 4 0 V, C U R R E N T 0 . 5 A

Description

The GD411SD is designed for low power rectification.

Package Dimensions

Millimeter

REF.

Min.

Max.

1.05

0.10

1.00

1.45

1.80

2.70

Min.

Max.

0.85

0.20

0.25

0.10

0.40

0.18

0.80

1.15

1.60

2.30

0.15 BSC.

Absolute Maximum Ratings at T

Parameter

A = 25к

Symbol

Ratings

Unit

Junction Temperature

+125

Storage Temperature

Tstg

V_RRM

V_RMS

V_DC

I_FSM

C_J

-40 ~ +125

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Peak Forward Surge Current at 8.3mSec single half sine-wave

Typical Junction Capacitance between Terminal (Note 1)

Maximum Average Forward Rectified Current

Total Power Dissipation

3.0

0.5

225

Electrical Characteristics (at T

= 25к unless otherwise noted)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

IR=100ꢀA

Reverse Breakdown Voltage

(BR)R

300

500

IF1=10mA

IF2=500mA

VR=10V

Maximum Instantaneous Forward Voltage

Maximum Average Reverse Current

Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 10 volts.

2. ESD sensitive product handling required.

GD411SD

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