ISSUED DATE :2005/12/20
REVISED DATE :2006/05/24B
GTM
CORPORATION
GD401SD
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E
V O LT AG E 3 0 V, C U R R E N T 0 . 2 A
Description
The GD401SD is high frequency rectification for switching power supply.
Package Dimensions
Millimeter
Millimeter
REF.
REF.
Min.
Max.
1.05
0.10
1.00
1.45
1.80
2.70
Min.
Max.
A
A1
A2
D
E
HE
0.85
0
L
b
c
0.20
0.25
0.10
0.40
0.40
0.18
0.80
1.15
1.60
2.30
Q1
0.15 BSC.
Absolute Maximum Ratings at T
Parameter
A = 25к
Symbol
Tj
Ratings
Unit
к
к
V
Junction Temperature
+125
Storage Temperature
Tstg
VRRM
VRMS
VDC
IFSM
CJ
-55 ~ +125
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
30
21
V
Maximum DC Blocking Voltage
30
V
Peak Forward Surge Current at 8.3mSec single half sine-wave
Typical Junction Capacitance between Terminal (Note 1)
Maximum Average Forward Rectified Current
Total Power Dissipation
3.0
40
A
pF
A
Io
0.2
225
PD
mW
Electrical Characteristics (at T
A
= 25к unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
IR=100ꢀA
Reverse Breakdown Voltage
V
(BR)R
30
-
-
-
-
-
-
V
Maximum Instantaneous Forward Voltage
V
F
500
50
mV
ꢀA
ꢀA
IF=200mA
VR1=10V
VR2=30V
-
Maximum Average Reverse Current
IR
-
100
Notes: 1. Measured at 1.0 MHz and 0 reverse bias voltage.
2. ESD sensitive product handling required.
GD401SD
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