Datasheet > GC2307

GC2307

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	289K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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GC2307 数据手册

Pb Free Plating Product

ISSUED DATE :2005/06/20

REVISED DATE :

GTM

CORPORATION

GC2307

BVDSS

DS(ON)

-16V

60mꢀ

-4.0A

P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

Description

The GC2307 provides the designer with the best combination of fast switching, low on-resistance and

cost-effectiveness.

The GC2307 is universally preferred for all commercial-industrial applications and suited for low voltage

applications such as DC/DC converters.

Features

*Simple Drive Requirement

*Fast Switching

Package Dimensions

TO-92

S 1

S E A T IN G

P L A N E

Millimeter

REF.

Min.

Max.

4.7

Min.

4.44

3.30

12.70

1.150

2.42

Max.

4.7

3.81

4.45

1.02

0.36

0.51

0.76

0.51

1.390

2.66

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

V_DS

Ratings

-16

Unit

Gate-Source Voltage

V_GS

±8

Continuous Drain Current³

Pulsed Drain Current¹

I_D@T

=25к

=70к

-4.0

-3.3

I_DM

-12

Power Dissipation

P_D@T

=25к

1.38

W/к

Linear Derating Factor

Operating Junction and Storage Temperature Range

0.01

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-a

Ratings

Unit

ć/W

Thermal Resistance Junction-ambient³Max.

GC2307

Page: 1/4

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