Datasheet > GC01L60

GC01L60

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	272K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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GC01L60 数据手册

Pb Free Plating Product

ISSUED DATE :2005/09/14

GTM

CORPORATION

REVISED DATE :

BVDSS

DS(ON)

600V

12Ω

GC01L60

160mA

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GC01L06 utilized advanced processing techniques to achieve the possible on-resistance, extremely

efficient and cost-effectiveness device.

Features

*Simple Drive Requirement

*Low Gate Charge

*Fast Switching Characteristics

Package Dimensions

TO-92

S 1

S E A T IN G

P L A N E

Millimeter

REF.

Min.

Max.

4.7

Min.

4.44

3.30

12.70

1.150

2.42

Max.

4.7

3.81

4.45

1.02

0.36

0.51

0.76

0.51

1.390

2.66

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

600

f30

160

100

300

0.83

0.5

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

I_D@T

I_DM

A=25к

Continuous Drain Current, V_GS@10V

Pulsed Drain Current¹

A=100к

P_D@T

C=25к

Total Power Dissipation

Single Pulse Avalanche Energy²

E_AS

Avalanche Current

I_AR

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance Junction-ambient

Max.

Rthj-a

150

ć/W

GC01L60

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